*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Indicates Data in addition to JEDEC Requirements. Extended exposure to stresses above the ALYWG Recommended Operating Conditions may affect device reliability. Functional operation above the Recommended Operating Conditions is not implied. Maximum 3906 Ratings are stress ratings only. Thermal Resistance, Junction−to−Ambient RqJA 200 ☌/W Thermal Resistance, Junction−to−Case RqJC 83.3 ☌/W 2N Stresses exceeding Maximum Ratings may damage the device. Total Power Dissipation TA = 60☌ PD 250 mW 1 1 2 Total Device Dissipation T 2 C = 25☌ PD 1.5 W 3 3 Derate above 25☌ 12 mW/☌ STRAIGHT LEAD BENT LEAD Operating and Storage Junction T BULK PACK TAPE & REEL J, Tstg −55 to +150 ☌ Temperature Range AMMO PACKĬharacteristic Symbol Max Unit MARKING DIAGRAM Download schematic symbols, PCB footprints, 3D Models, pinout & datasheet for the 2N3906 by STMicroelectronics. Pb−Free Packages are Available* COLLECTOR 3 2 BASEġ Collector − Emitter Voltage V EMITTER CEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdcĪ = 25☌ PD 625 mW Derate above 25☌ 5.0 mW/☌.Link to page 1 link to page 3 2N3906 General Purpose Transistors
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